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High Current MegaMOSTMFET
N-Channel Enhancement Mode
VDSS IXTK 74 N20 IXTH 68 N20 200 V 200 V
ID25
RDS(on)
74 A 35 mW 68 A 35 mW
Preliminary data Symbol VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM Tstg Md Weight Max lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-264 TO-247 Test conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1.0 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C 74N20 68N20 74N20 68N20 74N20 68N20 Maximum ratings 200 200 20 30 74 68 296 272 416 300 150 -55 ... +150 1.13/10 10 6 300 V V V V A A A A W W C C C Nm/lb.in. g g C
G = Gate S = Source
G D S
TO-247AD (IXTH)
D (TAB)
TO-264 AA (IXTK)
D (TAB)
-55 ... +150
D = Drain Tab = Drain
Features Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure International standard package Fast switching times
Symbol
Test Conditions
Characteristic Values Min. Typ. 200 2.0 4.0 100 TJ = 25C TJ = 125C 500 3 35 Max. V V nA A mA m
(TJ = 25C unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 5 mA VDS = VGS, ID = 4 mA VGS = 20 V DC, VDS = 0 VDS = 0.8 VDSS VGS = 0 V
Applications Motor controls DC choppers Uninterruptable Power Supplies (UPS) Switch-mode and resonant-mode
Advantages Easy to mount with one screw (isolated mounting screw hole) Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 ms, duty cycle d 2%
IXYS reserves the right to change limits, test conditions and dimensions.
95512C (12/97)
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(c) 1998 IXYS All rights reserved
IXTH 68N20 IXTK 74N20
Symbol Test Conditions (T J = 25C unless otherwise specified) gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK RthJC RthCK TO-247 AD 0.15 TO-264 AA 0.15 0.35 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 1 (External) VGS = 0 V, VDS = 25 V, f = 1 MHz VDS = 10 V; ID = 0.5 ID25, pulse test Characteristic values Min. Typ. Max. 35 42 5450 1275 630 30 230 180 50 300 75 100 0.30 S pF pF pF ns ns ns ns nC nC nC K/W K/W K/W K/W
Terminals: 1 - Gate 3 - Source 2 - Drain Tab - Drain
1 2 3
TO-247 AD (IXTH) Outline
Dim.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
C2
Source-Drain Diode Symbol IS ISM VSD trr Test Conditions VGS = 0
Ratings and Characteristics (TJ = 25C unless otherwise specified) Min. Typ. Max. 74N20 68N20 74N20 68N20 74 68 296 272 1.5 600 A A A A V ns
TO-264 AA Outline
Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = IS, -di/dt = 100 A/s, VR = 100V
Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T
Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83
Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072
IXYS MOSFETs and All rights reserved (c) 1998 IXYS IGBTs are covered by one of the following U.S.patents:
4,835,592 4,850,072
4,881,106 4,931,844
5,017,508 5,034,796
5,049,961 5,063,307
5,187,117 5,237,481
5,486,715 5,381,025
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